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DG-MOSFETs, ideally suited for digital applications below 50nm, can be effectively used also for analog circuits, especially in independent drive (IDDG) configuration. As MOSFETs with two closely coupled channels, they can locally and dynamically alter the front gate threshold by an applied back-gate bias, thus enabling tunability. We explore how the IDDG-MOSFETs could be deployed as creative tools...
We focus in this work on threshold logic gates (TLQ) implemented using double-gate (DG) MOSFETs. The proposed TLQ's can be programmed dynamically via secondary (back) gate using the same bias conditions as the primary (front) gate. Moreover, they can realize universal threshold logic functions, which comprise Boolean operations as a subset.
This paper presents programmable simple and cascode current mirrors, based on novel double gate (DG) MOSFETs. The programmable current mirror has a wide tuning range, a wide bandwidth and low supply voltage of IV. As an application of the programmable current mirror, we present a programmable-gain current amplifier. SPICE simulation results for 100-nm DGMOSFET and IV supply voltage indicate good performance...
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