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Charge Pumping (CP) has historically been a widely utilized tool to study reliability-limiting interface and near interface trapping centers in Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). However, conventional CP methods are not effective for modern highly scaled devices due to high gate leakage current to CP current ratios. Fortunately, a newly developed CP technique has been developed,...
Using a newly developed single transistor eye-diagram method, we examined the effect of BTI stress on logic circuit critical timing under a realistic bit pattern (pseudo random). We demonstrated that the recoverable part of the BTI degradation produce significant timing skew that is random in nature. This random timing skew is in addition to the systematic timing degradation captured in measurements...
We utilize eye-diagram measurements of timing jitter to investigate the impact of PBTI in devices subject to DC as well as ring oscillator (RO) and pseudo-random binary sequence (PRBS) stress waveforms. We observe that RO measurements miss the relevant random timing jitter increases which are well captured using PRBS measurements. We also observe that DC, RO, and PRBS stresses all introduce similar...
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution - the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically...
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a–f). This observation obviously raises some concerning...
We demonstrate the extension of the recently developed spectroscopic charge-pumping (CP) technique to high-k gate stacks. To deal with the high density of bulk traps, we develop an experimentally based methodology to remove the bulk trap contribution from the measured CP data. We demonstrate the capability of the spectroscopic CP technique to measure band edge states and show that the traditional...
Stress induced leakage currents (SILC) are one of the most important reliability problems in present day CMOS technology. We have developed a new approach to SDT which exploits advantages provided by extremely thin (??1.2nm) dielectrics. The enormous difference between the high capacitance of the thin dielectric and the much smaller capacitance of the Si depletion layer allows application of a modest...
A fundamental understanding of the physical processes involved in the negative bias temperature instability (NBTI) has yet to be established. In this study, we have developed an "on the fly" approach to magnetic resonance in which ESR measurements are performed during negative bias stressing of MOS structures at elevated temperature. Our results clearly demonstrate E' center generation during...
We demonstrate voltage controlled spin dependent tunneling in 1.2 nm effective oxide thickness silicon oxynitride films. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way in materials of great technological importance. We obtain defect energy level resolution by exploiting the enormous difference between the capacitance of the very thin...
We have developed a means to perform "on the fly" electron spin resonance (ESR) measurements of NBTI defect generation. The approach permits ESR measurements to be performed during NBTI stress void of any recovery contamination. We demonstrate that elevated temperature (100°C) and modest negative polarity oxide electric field (<5MV/cm) generates ESR spectra of E' oxide defects. (These...
Recent work has shown that the negative bias temperature instability (NBTI) can be significantly suppressed through the incorporation of fluorine in the gate oxide of pure SiO2 pMOSFETs. In this study, we use spin dependent recombination and standard gated diode current measurements to investigate the atomic-scale processes involved in fluorine's suppression of NBTI. We find that fluorine can effectively...
It has been shown that the negative bias temperature instability (NBTI) may be significantly suppressed through the incorporation of fluorine in the gate oxide. In this study, we use the electrically-detected magnetic resonance technique of spin dependent recombination and standard gated diode current measurements to investigate the atomic-scale processes involved in fluorine's suppression of NBTI...
Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer (IL) of HfO2 based devices. The defect almost certainly involves an oxygen deficient...
Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon...
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