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The etching characteristics of new phase change material Ti 0.5 Sb 2 Te 3 (TST) were studied with the Cl 2 /Ar or CF 4 /Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore,...
Investigation of atomic migration behavior in nanoscale phase-change material is very valuable for phase-change memory applications. In this work, Ti 0.5 Sb 2 Te 3 -based phase-change nanobridges were fabricated and mass transport by atomic migration was studied. A 3-D finite-element simulation on the electrothermal field was introduced to describe the electrothermal environment...
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