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The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for...
In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated contains both geometrical parameters (dimensions of the cells) and physical parameters such as mobility, conductivity, Hall factor, carrier concentration...
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters...
Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of offset at room temperature and offset drift. We looked for the best geometry that would minimize the offset and its drift. The targeted specification was ±30 µT for offset at room temperature and ±0.3 µT/°C for the drift. The measurement setup developed allows a clean, reliable and fast analysis of...
A new technique for driving silicon-on-insulator pixel matrixes has been proposed in, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8×8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with...
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