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AlGaN/GaN nanowire omega-FinFETs have been fabricated and characterized. Tetramethylammonium hydroxide (TMAH) lateral wet etching and atomic layer deposited (ALD) HfO2 sidewall spacer result in very sharp vertical edges and fin widths from 200 nm down to 30 nm. Omega-gate structure exhibits excellent gate controllability and separates the channel from the underlying thick GaN buffer layer, which leads...
In this paper, a novel method of extracting tunneling resistance from a tunneling FET (TFET) is proposed and verified by small-signal analysis based on radio-frequency (RF) data. Unlike the approaches made in the small-signal equivalent circuits of conventional MOSFETs, the on -state total channel resistance can be separately analyzed into tunneling and inversion layer resistances. In this paper,...
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