The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for Vg>Vt, which greatly amplify the control on the surface...
This work reports a comparison of high-k Al2O3/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from −10V to −15V (p type devices) and show extremely stable memory...
We present the experimental demonstration of the first terahertz isolator (working frequency > 1 THz), obtained using the non-reciprocal electromagnetic properties of graphene under magnetostatic bias. The presentation will cover in detail the design, fabrication and measurement of the device. The isolator operated in reflection for circularly polarized waves, showing two bands at 3 and 7.5 terahertz...
In this letter, we present a novel device, the germanium electron–hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.