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A 2D simulation for the lateral photo-Dember effect is used to calculate the THz emission of metallic nanostructures due to diffusion currents in order to realize a series of THz emitters.
A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.
The pulse evolution from onset to steady state in a mode-locked vertical-external-cavity surface-emitting laser producing femtosecond and picosecond pulses was studied. A 40-times reduction in pulse shortening rate from picosecond to femtosecond regime was observed.
We report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
The rms timing jitter of 500-fs optical pulses from a passively mode-locked, actively stabilised vertical-external-cavity surface-emitting laser was determined by the Von der Linde method to be 350 fs over 500 Hz – 500 KHz.
We report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.
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