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A 25 GHz low noise amplifier using standard 0.18 mum digital CMOS technology is presented. Matching networks were based upon slow wave transmissions lines. Peak gain of 12.8 dB at 24 GHz and in-band minimum noise figure less than 4 dB were obtained at a power consumption of 8 mW. These record results demonstrate the usefulness of the slow wave transmission line approach. A compact model of slow wave...
In this paper the design methodology of a single stage CMOS low noise amplifier with slow wave transmission lines was described. This design methodology is useful for designing higher gain multi stage amplifiers.
An ultra-low power logic NVM has currents <10 nA/cell in all operating regimes, high programming/erase speeds, excellent endurance/retention and allows strong Vdd fluctuations. The memory uses CMOS inverter read-out principle (C-Flash) and F-N injection for programming and erase with voltages below +5 V. The memory is intended for RFID and advanced mobile applications requiring small/middle sized...
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