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The supply current of plastic encapsulated microelectronic devices in the presence of a high potential source can increase abnormally due to parasitic gate leakage. According to reliability qualification standards, stress during a parasitic gate leakage test is applied by a corona discharge at a thin tungsten needle placed a few centimeters above the devices under test. The gate leakage sensitivity...
Passivation cracking is one of the main failures of integrated circuits (ICs) and thermo-mechanical failures are the root cause. A major cause for these failures is due to the mismatch of thermal and mechanical parameters while manufacturing or working, especially stress concentration at the interface and the edge. The ICs for different fixing position endure different thermal cycles, overload and...
Passivation cracking is one of the main failures of ICs and thermo-mechanical failures are the root cause. A major cause for these failures is due to the different coefficients of thermal expansion (CTE), different Young's modulus, Poisson's ratios of package materials under different temperatures and some mechanical loadings. Therefore the working conditions of compound materials used here is expected...
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