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We report the process evaluation and integration for the embedded RF passive device in this paper. Two sets of test vehicle were designed and fabricated for the evaluation of RF passive devices embedded in USG (undoped silicate glass) and BCB (Benzocylcobutene) dielectric. We encountered resistor uniformity issue and BCB capacitor limitation during the process set up. After process issue solving and...
In this letter, a novel integration scheme, for metal-insulator-metal capacitors comprising perovskite-type dielectrics and Cu-based bottom electrodes, has been demonstrated on low-temperature FR4 packaging substrates. Cu oxidation during dielectric deposition and postannealing is completely avoided by a dielectric-first process flow with Ti as oxygen-getter. By using evaporated barium strontium titanate...
By using thick photoresist AZ9260 and sputtered Ti film as masks, dry etching characteristics of benzocyclobutene (BCB), including etch rates, selectivities and sidewall profile, are investigated in CF 4 /O 2 and SF 6 /O 2 plasmas with various fluorine concentration, chamber pressure and RF power conditions. At 300 W and 50 mTorr, maximum etch rates of 0.7 and 0.6 μm/min...
This paper demonstrates, for the first time, the fabrication of RF MEMS switches on a flexible organic substrate (FR-4) using wafer transfer technology (WTT). The switches were first fabricated on a low resistivity silicon wafer using a standard MEMS process. Eventually these switches were transferred onto a FR-4 substrate by bonding followed by mechanical grinding and wet removal of silicon. The...
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