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The origin and model of the time dependence of RIE-plasma induced optical property degradation of GaInAsP/InP quantum-well structures were investigated. Non-radiative recombination was enhanced by irradiating CH4/H2-plasma, and was found to be recovered during high temperature annealing in the embedding growth by organometallic vapor-phase-epitaxy.
Fabrication processes of GalnAsP/InP arbitrary shaped low dimensional quantum structures using electron beam (EB) lithography, Ti-mask lift-off and reactive ion etching (RIE)-dry etching is reported. Scanning electron microscopy is used to characterised the samples. Various patterns were successfully achieved such as quantum wires and quantum dots with better dimensional and positional controllability...
By adopting Bragg wavelength detuning into DFB lasers with wirelike active regions, the changes of threshold current densities and differential quantum efficiencies as low as plusmn19% and 24%, respectively, were obtained between 10degC and 85degC.
By adopting the Bragg wavelength detuning from the gain peak wavelength of active regions, the characteristic temperature for threshold current of 95 K and that for the differential quantum efficiency of 243 K were obtained for 20 to 80degC temperature range
Polarization dependent anisotropic lasing characteristics, which are attributed to the anisotropic dipole moment in quantum-wires, wire clearly observed two types of GaInAsP/InP strain-compensated multiple-quantum-wire lasers, where quantum-wires are laid on in parallel and perpendicular to the light propagating direction
1540 nm wavelength GaInAsP/InP quantum-wire (24 nm wide) distributed feedback lasers were realized by dry etching and regrowth method. A threshold current as low as 2.7 mA, a differential quantum efficiency of 19 %/facet and an SMSR of 51 dB (@ 2Ith) were attained under RT-CW condition for the stripe width of 3.0 mum and the cavity length of 330 mum
A RT-CW operation of GaInAsP/InP 5-stacked quantum-wire lasers (23 nm wide) fabricated by EB lithography, CH/sub 4//H/sub 2/-RIE and OMVPE regrowth was achieved. No significant changes in performance were observable even after 7100 h under the RT-CW condition.
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