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Combined thermal and near-field imaging monitors the catastrophic optical damage dynamics in diode lasers. Red-emitting high-power lasers display a very rapid and spatially confined catastrophic process with re-absorption as the key-mechanism of device degradation.
Integration of optically-pumped VECSELs with pump lasers is demonstrated using an innovative contacting scheme. Devices for medium-power green conversion (lambda~1060 nm) are fabricated with threshold currents as low as 160 mA and cw output powers exceeding 100 mW.
We report on the lasing and photoluminescence dynamics of 1050nm semiconductor disk lasers using well and barrier pumping. Spectral and temporal features are explained using a rate equation model including microscopic gain and luminescence.
Results on high-power optically pumped semiconductor disk lasers are reviewed. Multi-Watt emission with differential efficiencies larger than 40% and power-densities up to 15 kW/cm2 is demonstrated in the near-infrared wavelength range of 920-1050 nm
We have demonstrated the first optically pumped semiconductor disk laser at 1050 nm with 3 W continuous wave output power and good beam quality. High differential efficiency of 42% results in an optical conversion efficiency of 30%.
We demonstrate more than 5.5 W cw output power at 1000 nm and good beam quality of M/sup 2/=1.8 from a optical pumped semiconductor-disk laser at room temperature. High differential efficiency of 53% and optical-to-optical conversion efficiency of 41% has been achieved.
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