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We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial...
Nowadays, 2.5D and 3D stacked die technologies are under prosperous development for the benefit of transistor scaling and performance. However, with the trend of higher electrical performance, lower power consumption and cost effective demand, Non-TSV interposer (NTI) is one of the ways to meet the requirement. This paper introduces and demonstrates the NTI process flow, which includes chip-on-wafer...
We propose a novel hybrid bonding technology with a high stacking yield using ultra-high density Cu nano-pillar (CNP) for exascale 2.5D/3D integration. To solve the critical issues of a current standard hybrid bonding technology, we developed scaled electrodes with slightly extruded structure and unique adhesive layer of anisotropic conductive film composed of ultra-high density CNP. Test element...
Among many challenges in the development of 3D-IC products, cost is one of the top concerns. Within cost elements, known-good-die (KGD) and 3D-IC integration yield, are among a few biggest impacting factors. In order to achieve high 3D-IC integration yield, build-in self-repairing, design-for-testing (DFT), diagnostic, and failure analysis (FA) capabilities, are very important elements of 3D-IC FPGA...
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