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The effect of nanopipe defects on the device performance of Gallium nitride (GaN) avalanche photodiodes (APDs) is investigated and the influence mechanism is analyzed. It is discovered that nanopipes can incorporate more carbon impurities, resulting in the introduction of more deep energy level defects into the epitaxial layers. This causes an increase in device leakage and challenges in distinguishing...
The failure analysis of a GaN p–i–n diode is carried out by current–voltage (I–V) tests, emission microscope (EMMI), focused ion beam (FIB), and scanning electron microscope (SEM). A nanotube is found at the location of the luminous spot in the EMMI test. Intentional breakdown experiments show that the breakdown voltages of about 1/3 diodes with the size of are lower than 50 V. These proportions...
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