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Double-grating-gate field-effect transistors have a great potential as terahertz detectors. The double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. Low and high magnetic field detection results are used to determine the electron mobility and electron concentration, respectively, in the different parts of the channel.
We report on ultrahigh sensitive broadband terahertz detection using asymmetric double-grating-gate high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz.
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