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A novel monitoring test structure is proposed for plasma process-induced charging damage (PID) based on charge-based capacitance measurement (CBCM), referred to as PID–CBCM. By eliminating antenna capacitance interferences, a remarkably smaller gate capacitance (tens of fF) can be obtained for effectively evaluating the influence of PID on metal oxide semiconductor field-effect transistors (MOSFETs)...
A highly effective and versatile test structure with a flexible pulse generating circuit is proposed. Several significant features of the key components are demonstrated, that is, the tunable ring oscillator, the start-stop pulse controller, the Charge Injection induced Error Free Charge Based Capacitance Measurement (CIEF-CBCM) using Self-Aligned pulses and the modified Charge Pumping (CP) technique...
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