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Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are...
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
A number of electronic devices have been tested for sensitivity to single event effects for space applications by Ball Aerospace & Technologies Corp. and collaborators. Test conditions and results are presented for each device.
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