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The difference in surface energies between the Ga‐polar orientation and the N‐polar orientation of GaN translates into a completely different behavior for the incorporation of intentional and unintentional impurities. Oxygen is found to be an impurity with higher concentration in the N‐polar films than in Ga‐polar films and is the cause of n‐type conductivity observed in N‐polar films. Utilizing this...
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