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Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed...
With increasing scale/complexity in phemt switch circuits and dimension shrinking of unit phemt switch devices, distributed effects are becoming crucial on insertion loss and harmonics, especially the second harmonic. Distributed effects of metal resistances and inductances are taken into account in this paper. It is shown that distributed effects, either along the drain/source fingers or along the...
Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch...
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