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Three examples are given, which show that ion implantation and electron irradiation can drastically modify the electrical properties of SiC and SiC-based MOS capacitors. (1) It is demonstrated that sulphur ions (S + ) implanted into 6H-SiC act as double donors with ground states ranging from 310 to 635meV below the conduction bandedge. (2) Co-implantation of nitrogen (N + ) – and silicon...