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Amorphous silicon oxicarbide thin films (a-SiOC(:H)) were deposited by RF-magnetron sputtering using Si or SiC target in Ar/CH4/O2 flow. Interatomic bonding and light emission properties were analyzed by FTIR in transmission and attenuation total reflection (ATR) mode, Raman scattering and photoluminescence spectroscopy. Comparison of the results obtained by FTIR and ATR allows us to suggest that...
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