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HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of operation through gate leakage characteristic changes: burn-in stabilization up to 5 V, followed by stable operation up to 20 V, then voltage-dependent degradation...
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF < 2 dB with >24dB of gain across 28 GHz- 39.2 GHz frequency range, and a very broad range of usable...
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