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Supercapacitors are evolving into an important component in energy storage technology with the capability for storing and discharging energy very quickly and effectively. State-of-the-art supercapacitors feature activated carbon electrodes impregnated with a non-aqueous electrolyte (typically acetonitrile) that operate at voltages between 2.2–2.7V. Unfortunately, activated carbons have low specific...
We have successfully obtained GalnAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1μm thickness InP and silicon substrate. 1.2μm wavelength GalnAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained...
Low threshold current 1.5pm GalnAsP laser was obtained grown on directly bonded InP/Si substrate using MOVPE. To decrease the threshold current, the thickness and doping condition of p-InP cladding layer were optimized. In the new structure laser, the threshold current became half compared to the previous structure laser, and obtained almost comparable threshold current with the laser grown on InP...
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