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This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy, and deep level transient spectroscopy. The HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density is reduced...
Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation...
Magnetotransport study has been performed on AlxGa1-xN/GaN heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to...
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