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Experimental results for maximum cut-off frequency (fT) values of 75 and 52 GHz were achieved for SiGe-base and Si-base bipolar transistors with intrinsic base sheet resistances in the 10-17 kΩ/square range. These results extend the speed of silicon bipolar devices into a regime previously reserved to GaAs and other compound semiconductor technologies. Excellent junction characteristics...
A self-aligned epitaxial base technology is presented which allows fabrication of advanced bipolar devices with 40 to 60 nm basewidths and implementation of novel profile design concepts. The viability of this technology for advanced bipolar circuits has been examined by fabricating ECL ring oscillators, thus demonstrating that fully scaled epi-base devices can be successfully integrated. Devices...
The scaling limits of nonplanar polysilicon emitters are studied by fabricating and measuring NPN transistors with emitter depths between 10 nm and 25 nm, with emitter widths down to 0.2 μm, and with an epitaxial base as narrow as 50 nm. Excellent device characteristics can be achieved for an emitter depth of 25 nm. Transistors with shallower emitters are degraded by an arsenic depletion at...
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