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We present experimental study of terahertz detection by asymmetric dual-grating gate HEMT structures. The separate contributions of the gate leakage current and the loading effect to the rectification signal in the sub-threshold region was investigated versus temperature and frequency range.
We report on a magnetospectroscopy study of a set of four HgTe quantum wells of different thickness. In quantizing magnetic fields, intraband and interband transitions have been observed. The obtained results are compared with the allowed transition energies calculated using the 8 × 8 Kane model.
Rectification at room temperature by asymmetric double-grating-gate GaAs-based field effect transistors has been observed up to 3.89 THz at zero drain bias, and attributed to the peculiar unequal spacing among the two gratings.
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