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We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.
We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The...
Generation of THz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high mobility transistors is observed at room temperature. Spectral analysis of the emitted radiation is presented.
In this work we present an overview of experimental results on THz detection and emission by nanotransistors. We present recent results on THz emission obtained in different types of InGaAs/InP and GaN/AlGaN nanometric high electron mobility transistors.
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