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Bulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures. Therefore, 1D, 2D and even 3D massless particles can be observed in topological phase transitions driven by intrinsic (quantum well thickness, Cd content) and external (magnetic field, temperature, strain or hydrostatic pressure) physical parameters. In this work, we report on our...
Bulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures. Therefore, 1D [1], 2D [2] and even 3D [3] massless particles can be observed in topological phase transitions driven by intrinsic (quantum well thickness, Cd content) and external (magnetic field, temperature or pressure) physical parameters. So far, the phases of 2D [1] and 3D [4]...
We report on THz emission from HgCdTe bulk films. Our experiments clearly show magnetically tunable THz emission that can be attributed to electron radiative recombination between the Landau levels (cyclotron emission). Energy band structure theoretical calculations using Kane Hamiltonian are performed. They allow identification of observed resonances as related to transitions between two lowest conduction...
We report on sub-Terahertz photoconductivity of bulk HgxCd1−xTe crystals with composition close to semiconductor-to-semimetal topological transition. Low magnetic field Shubnikov-de Hass like oscillations were observed with a period which does not depend on the incident frequency. Moreover, anomalous B-periodic oscillations were also observed at higher magnetic fields.
We report on a magnetospectroscopy study of a set of four HgTe quantum wells of different thickness. In quantizing magnetic fields, intraband and interband transitions have been observed. The obtained results are compared with the allowed transition energies calculated using the 8 × 8 Kane model.
Recent results on THz detection by FETs are reported. THz Imaging with FET and detection in quantizing magnetic field. Results of THz Imaging show that FETs arrays are good candidate for real time imaging. In magnetic field we report an enhancement of signal at the cyclotron resonance condition.
THz detection by plasma wave mechanism in InGaAs HEMTs is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows to explain the nature of strong oscillations observed in the transistor Terahertz photoresponse.
We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively...
We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
An overview is given on recent experimental results in THz detection with high electron mobility transistors. Polarization studies showed clear antenna (directional) effects in detection. Experiments in quantizing magnetic fields allowed us to clarify the role of gated and ungated parts of the channel in detection.
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