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In this paper, an overview of main results concerning THz detection by nanometer field effect transistors (FETs) and heterojunction based transistors (HBTs) is presented. Different GaInAs/InP and GaN/AlGaN nanometer field effect transistors based detectors are presented. We present also first Silicon C-MOS transistors based integrated circuits for wireless communication in sub-THz range. Special attention...
Recent developments of THz detector arrays based on plasma wave field effect transistors are presented. By simultaneous development of the transistor arrays with their read-out circuits and diffractive 3D printed optics we demonstrate systems for imaging in 300 GHz atmospheric window with cameras or fast linear scanner. The first high speed THz postal scanner developed for real time fast A4 envelopes...
An overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. As a conclusion, we will show one of the first real world application of the FET THz detectors: a demonstrator of the imager developed for fast postal security.
Experimental and theoretical investigations of the influence of substrate thickness on the performance of Si field effect transistor terahertz detectors are presented‥ We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, may be coupled to the substrate leading to important responsivity losses‥ The ways of avoiding...
We demonstrate detection of individual pulses of terahertz radiation generated in femtosecond laser systems by InGaAs plasma-wave terahertz detectors. Nonlinearity of the detection mechanism is analyzed experimentally by comparison of saturation effects at femtosecond and nanosecond terahertz excitations. Good sensitivity and wide dynamic range make these detectors promising for short-pulsed terahertz...
Two-dimensional electron plasma in nanometer size field effect transistors can oscillate in Terahertz (THz) frequencies, far beyond transistors fundamental cut-of frequencies. We propose an overview of some important and recent results concerning THz detection by nanometer field effect transistors. The subjects were selected in a way to stress some new aspects of the physics of nanometer scale field...
The goal of our work was to study the capability of field effect transistors to measure high power THz radiation at frequencies from 0.1 up to 3 THz and to determine the linear detection limits. We observed different types of the photoresponse dependence on the incident radiation power. We qualitatively explain the unusual sub-linear behavior observed in high intensities.
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10−10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications.
Recent results on THz detection by FETs are reported. THz Imaging with FET and detection in quantizing magnetic field. Results of THz Imaging show that FETs arrays are good candidate for real time imaging. In magnetic field we report an enhancement of signal at the cyclotron resonance condition.
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
We review a few recent results concerning the physics and applications of Field Effect Transistors ( FETs) as Terahertz detectors and emitters. Particularly we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the transistor channel.
Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are...
An overview is given on recent experimental results in THz detection with high electron mobility transistors. Polarization studies showed clear antenna (directional) effects in detection. Experiments in quantizing magnetic fields allowed us to clarify the role of gated and ungated parts of the channel in detection.
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