The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained...
A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP...
This paper describes the fabrication and high speed characterization for uni-traveling-carrier photodetectors (UTC-PD) with dipole-doping layers. The dipole-doping InGaAs/InP layer has been introduced at the InGaAs (absorption layer) and InP (collection layer) interface to prevent current blocking in our UTC-PD devices. These UTC-PDs have achieved high photocurrent of 52 mA, high responsivity of 0...
A 60GHz 4×4 circular polarized (CP) patch array antenna with a 90nm CMOS OOK modulator are integrated in low temperature co-fired ceramic (LTCC) substrate to form a SiP transmitter. The CP array shows a 3dB axial ratio (AR) bandwidth of over 8GHz. It has a 3dB beamwidth of 20º and a peak gain of 16.8dBi. Device modeling at 60GHz is done to accurately simulate the lumped components. The CMOS modulator...
Nowadays GaAs MESFETs dominate in modern MIC/MMIC applications such as switches, PA, LNA, oscillator, etc. Therefore, reliable modeling methodologies and accurate device models of GaAs MESFETs are extremely crucial and in great demand. In this paper, both small signal and large signal modeling methods of GaAs MESFETs will be addressed. Firstly, a GaAs MESFET distributed model based on the accurate...
This paper is concerned with modeling ultrasonic wave propagation in epoxy materials to better understand NDE procedures and to provide reliable input to more complex models of guided wave propagation in layered structures. Different physical models are considered in the context of how well they simulate the (known) linear relationship between bulk wave attenuation coefficients and frequency. The...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.