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Schottky barrier (SB)-MOSFETs with NiSi and epitaxial NiSi2 S/D contacts with gate lengths as small as 20 nm are presented. Epitaxial NiSi2 FETs show higher on-currents than corresponding NiSi devices due to its lower SB height. A striking observation is that tunnelling currents through the fairly large SB decrease at very short gate lengths in SB-MOSFETs, in contrast to the scaling behavior of conventional...
In this paper, we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier MOSFETs with boron segregation and n-type Schottky barrier MOSFETs with arsenic segregation show substantially...
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 muA/mum for n-type devices with As segregation and 427 muA/mum for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the...
This paper presents fully-depleted short-channel Schottky barrier (SB) MOSFETs with silicidation induced dopant segregation of B at a low temperature of 450degC. The integration of nickel silicide combined with either As or B segregation significantly improves the switching performance of dopant-free SB-MOSFETs. The implantation dose dependence of the device characteristics is studied on long channel...
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