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This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for Vg>Vt, which greatly amplify the control on the surface...
We report on the fabrication and electrical characterization of Ω-gated nanowire (NW) array pFETs on SOI. Devices with gate lengths of L = 400nm and L = 2 μm and 〈110〉 - and 〈100〉 - channel orientations were fabricated using a top-down approach. Each device consists of up to 1500 NWs with a crosssection of 20 × 20 nm2. The devices feature excellent electrical characteristics with high on-currents,...
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 muA/mum for n-type devices with As segregation and 427 muA/mum for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the...
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