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Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensive attention due to both the intriguing fundamental properties and their potential applications in optoelectronic devices. GaAs NWs grown by metalorganic chemical vapor deposition (MOCVD) often exhibit tapered and kinked morphologies, depending on growth temperature. However, straight NWs of uniform...
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