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We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures...
We investigate size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots (QDs) grown using molecular beam epitaxy and atomic layer epitaxy. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy with increasing ZnTe buffer thicknesses. This shift of...
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