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We have surveyed 22,155 analyses issues to know the portion of surface analysis at the total analyses activities. According to the survey result, the contribution of SIMS in the total analyses issues was about 7%. The portions of semiconductor process control, composition and contamination in the SIMS analyses issues are 25%, 29% and 16%, respectively. In this article, some examples of the semiconductor...
We have successfully developed integration friendly dual metal gate process utilizing a dual thickness metal inserted poly-Si stacks (DT-MIPS) structure; poly-Si/TaN/HfON stacks for nMOS and poly-Si/capping metal layer(c-ML)/AlOx/TaN/HfON stacks for pMOS. First, in spite of different metal thickness on n/pMOS, a high-selectivity gate etch process can completely remove metal and HfON layers from the...
The nonvolatile memory behavior, using novel material, PAMAM dendrimer was investigated. Although PAMAM dendrimers are intrinsically insulating materials, the metal coordinating functionality in the dendrimers can provide the PAMAM device the electronically controllable conductivity. In order to realize the bistable memory behavior in the PAMAM device, an external circuit consisting of two diodes...
High energy borane (B2H6) gas cluster ion beam (GCIB) successfully enables a sub-10 nm box-shaped dopant profile without channeling tail, and steep gradient (2.5 nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces the dependency of drive current on gate overlap capacitance variation for scaled devices. Moreover, the perimeter...
We propose a novel Vth, control method for HfSiON (or HfO2) with poly-Si and metal inserted poly-Si stacks (MIPS) gates. By using a selective AlOx etch (SAE) process, we successfully integrate dual high-k gate oxide scheme; HfSiO/poly-Si stack for nMOS and HfSiO/AlOx/poly-Si stack for pMOS. Therefore, symmetrical Vth values of 0.43V(nMOS)/-0.44V (pMOS) have been obtained in poly-Si gate. For MIPS...
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