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AlGaN hexagonal nano-pyramids were formed on GaN/sapphire, AlN/sapphire and Al 0.5 Ga 0.5 N/sapphire using selective area heteroepitaxy. It is found that both interfacial strain due to the lattice mismatch and the growth conditions greatly impact growth rate, Al incorporation and facet quality of these AlGaN nanostructures. A correlation between the interfacial strain provided by the...
The optical properties of silicon nanowire films fabricated on bulk Si and glass substrates are reported. The total reflectance of aligned nanowire arrays formed by a wet etch process on bulk Si is lower than the control over all wavelengths below the bandgap, varying from ~1% at 300 nm to les 10% at 1,000 nm. Similar results are observed for nanowire thin films. The observed reflectance is related...
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