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Layer‐by‐layer assembled 2D montmorillonite nanosheets are employed by M. C. Hersam and co‐workers for high‐performance, solution‐processed dielectric thin films, as described on page 63. These spatially uniform sub‐10‐nm‐thick dielectrics possess high areal capacitances and low leakage currents that enable low‐voltage operation of complementary solution‐processed semiconductor transistors. These...
Layer‐by‐layer assembled 2D montmorillonite nanosheets are shown to be high‐performance, solution‐processed dielectrics. These scalable and spatially uniform sub‐10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm−2 and low leakage currents down to 6 × 10−9A cm−2 that enable low voltage operation of p‐type semiconducting single‐walled carbon nanotube and n‐type indium gallium zinc...
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