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We have successfully grown GaAs/AlGaAs MODFETs directly on silicon substrates by molecular beam epitaxy. We have found that an orientation slightly off (100) is well suited for the growth of GaAs/AlGaAs on silicon substrates. MODFETs fabricated from layers grown on Si had transconductances of 170 mS/mm at room temperature and exhibited no looping. When cooled to 77 K, the transconductance rose to...
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