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Photoluminescence decay dynamics of SiO 2 films containing Si nanocrystals (nc-Si) and Er was studied. On increasing the Er concentration, the 1.54μm PL due to the intra-4f shell transition of Er 3+ increased drastically, while the PL peak at 0.8μm due to the recombination of electron-hole pairs in nc-Si decreased and the lifetime became shorter. For the 1.54μm PL, PL delay was observed...
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