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We present our progress in the development of monocrystalline n-type cell for industrial manufacturing. Our cell uses a homogeneous boron front-side emitter and a phosphorous back-surface field, which are contacted with screen-printed grids on both sides of the cell. Our current process allows the stable manufacturing of 156 × 156 mm2 cells with a front-side efficiency of around 20% on industrial...
We present our progress in the development of monocrystalline n-type cell for industrial manufacturing. Our cell uses a homogeneous boron front-side emitter and a phosphorous back-surface field, which are contacted with screen-printed grids on both sides of the cell. Our current process allows the stable manufacturing of 156 × 156 mm cells with a front-side efficiency of around 20% on industrial...
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