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Growth behavior and microstructure of oxide scales formed on WSi 2 coating by isothermal oxidation between 800 and 1300°C were investigated. At and below 1000°C, lamellar WO 3 embedded in the amorphous SiO 2 matrix was formed from the direct oxidation of WSi 2 by inward diffusion of oxygen through short-circuit paths. At the intermediate temperatures between 1100 and...
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