The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Silicon quantum dots (Si QDs) featuring high photoluminescence (PL) intensity are necessary for the realization of different photonic and photovoltaic devices, such as light‐emitting diodes (LEDs) and luminescent solar concentrators (LSCs). Herein, Si QDs on a ≈100–200 nm thin silicon dioxide membrane with a metal back‐coating are prepared. The dots are formed from the device layer of a silicon‐on‐insulator...
In this paper we report of a novel and very simple fabrication method for realizing amperometric gas sensors using conventional wire bonding technology. Working and counter electrodes are made of 360 vertically standing bond wires, entirely manufactured by a fully automated, standard wire bonding tool. Our process enables standing bond wires with a length of 1.24 mm, resulting in an extremely high...
This paper reports on a novel miniaturized MEMS-based amperometric nitric oxide sensor that is suitable for a point of care testing device for asthma. The novelty lies in the combination of a high surface area microporous structured electrode, nano-structured Nafion that is coated on the side walls of the micropores, and liquid electrolyte. This combination allows detection of very low concentration...
Thin wafer handling is an important issue in 3D integration technologies. This paper reports on an efficient method for bonding a thin wafer and debonding it at room temperature from a carrier wafer. This method addresses the major problem of fragility and flexibility in handling of thin wafers used in TSV fabrication. In the presented method the carrier wafer is spin coated with an electrochemically...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.