The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I–V characteristics of epitaxially relaxed InGaN with Ni contact have been revealed at 373 K. An incremental current of $11.74~\mu \text{A}$ has been found at 373 K with the...
Future of microwave, power and photonics industry is focused on GaN due to its extraordinary material properties such as wide and direct band gap, large thermal and chemical stability, high breakdown voltage, high saturation velocity. Formation of devices for these applications requires a material selective etching which is performed via wet-etching process. In this paper, temperature dependent etching...
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.