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For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45 nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380 nm to 190 nm poly-pitches.
We report a successful implementation of epitaxially grown Phosphorus-doped (P-doped) embedded SiC stressors into SOI nMOSFETs. We identify a process integration scheme that best preserves the SiC strain and minimizes parasitic resistance. At a substitutional C concentration (Csub) of ~1.0%, high performance nFETs with SiC stressors demonstrate ~9% enhanced Ieff and ~15% improved Idlin against the...
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
We have investigated the impact of laser spike anneal (LSA) on the performance of ultra-thin SOI MOSFETs. LSA was found to significantly reduce the parasitic external resistance in UTSOI devices. Reduced external resistance in conjunction with improved gate activation resulted in a substantial improvement in nFET performance. A conventional spike RTA followed by LSA at 1300C enhances nFET drive current,...
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