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This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results...
SiC is among the most promising materials for next generation power electronic devices due to its superior physical properties to Si and relative mature technology. SiC MOSFET is expected to offer performance improvement over Si counterpart. This paper presents the characterization of 1.2 kV SiC MOSFET, including its static and dynamic characteristics, and its high-frequency (1 MHz), high-power (1...
Over the past ten years, there has been increased incorporation of electronic power processing into alternative, sustainable, and distributed energy sources, as well as energy storage systems, cars, airplanes, ships, homes, data centers, and the power grid. The goals have been to reduce the size, weight, and maintenance and operational costs of these power systems, while increasing overall energy...
This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/Junction-Barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on...
This paper describes an innovative design of compact trigger generator with repetitive pulse to drive high voltage gas switch. The basic circuit of trigger generator is analyzed by using P-Spice software. The trigger generator consists of a charging capacitor, a pulse transformer, a trigger gas switch and a control circuit. The incorporate design of capacitor and transformer enables the generator...
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