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A medium-voltage IGBT converter with turn-on snubber is presented. The drastic reduction of turn-on losses allows the inverter to reach a peak output power well beyond the 12-MVA mark. The paper discusses the design challenges for the new inverter and presents test results.
Commonly an IGBT cannot withstand a surge-current pulse (large overcurrent with a duration of some milliseconds) due to the current saturation characteristic of this device. In the case of a converter's single device failure the IGBT switches are driven into pulse-blocking mode to prevent a DC-link short-circuit and subsequent IGBT failures. This strategy leads to an asymmetric short circuit of the...
This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chips under short-circuit condition. Especially under short-circuit type two even small asymmetries in the output characteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connection drastically.
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