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Effect of silicon doping on the elastic–plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent deformation of GaAs nanovolume. We found the substitutional Si point defects to decrease the pressure of GaAs-I→GaAs-II...
The wetting behavior of liquid Ni and NiW10 on MgO(100) single crystals was examined by the sessile drop method at 1773K in flowing Ar. A special procedure was used for in situ opening of the Ni/MgO and NiW10/MgO interfaces directly during wettability test at high temperature. Scanning probe microscopy revealed evidence of strong surface modification of MgO(100) during wettability tests that was found...
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