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Boron-doped super-high density nano-crystalline Si quantum dot thin film is demonstrated by utilizing a gradient Si-rich oxide multilayer structure. The boron doping effect and its significant influence on photovoltaic properties are observed and discussed.
A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700°C exhibits not only high optical transmittance...
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