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Dielectric and MOS interface properties of SiO2 deposited with atomic layer deposition (ALD) on GaN with several surface treatment and oxide structures have been investigated via DC measurements. ALD SiO2 on dry etch + NaOH-treated GaN surface exhibited higher breakdown voltage with small distribution, larger barrier height characteristic, and higher charge to breakdown characteristics when compared...
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional...
The potential of GaAs pHEMT technology for high-frequency power-switching applications is discussed within the context of integrated power supplies for portable wireless systems. Various technology considerations are presented, including the optimization of the power-switching transistor and passives integration. Two design examples for integrated dc–dc converters are implemented in a 0.5-μm GaAs...
A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these...
This paper presents the switching characterization of 1200 V, 5 A SiC JFET prototype devices for application in an AC three-phase current-source rectifier (CSR) with a switching frequency of 150 kHz. The result of device on-resistance is shown as a function of junction temperature. Using a simplified gate drive design, the switching characteristics of the SiC JFET are measured experimentally at voltage...
Conventional power delivery methods for microprocessors and high-performance ASICs have fundamental limitations in meeting the power requirements of future IC technologies due to large interconnect parasitics. A new three-dimensional (3D) power delivery approach along with a cellular power supply architecture is proposed as a possible solution to the problems of conventional 2D power delivery. Different...
A fully-integrated silicon-based thermal ink jet printhead which produces high speed, laser-quality printing at 300 spots per inch resolution is described. Monolithic integration of the 5-V logic circuitry, 13-V predriver circuitry, 40-V MOSFETs, and 192 n+ polysilicon heater elements requires multiple process and device design trade-offs. The TIJ printhead is customer replaceable and must be protected...
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