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We systematically investigated the impact of R and C scaling to 7nm node (N7) by accounting for FEOL and BEOL holistically. Speed-power performance of plainly scaled N7 turns out to be degraded compared to previous node. BEOL wire resistance (Rwire) multiplied by logic gate input pin cap (Cpin), Rwire×Cpin, is identified as a major limiter of performance and power at N7. Reducing Cpin is crucial to...
We systematically investigated the impact of R and C scaling to 7nm node (N7) by accounting for FEOL and BEOL holistically. Speed-power performance of plainly scaled N7 turns out to be degraded compared to previous node. BEOL wire resistance (Rwire) multiplied by logic gate input pin cap (Cpin), Rwire×Cpin, is identified as a major limiter of performance and power at N7. Reducing Cpin is crucial to...
With newer technology nodes, circuit/device/process codesign is essential to realize the advantages of scaling. Leveraging co-design approach based on a well-established manufacturing flow, a cost effective 28 nm 4G SOC technology has been crafted. This 28 nm design strategy uses two sets of design rules and 7 different Vt cells with optimal power gating to achieve a 2.4× increase in gate density,...
In this work we have demonstrated, for the first time, a 0.605μm2 dual core oxide (DCO) dual Vdd 8T SRAM cell in 45 LPG triple gate oxide CMOS process for use as L1 cache for high performance low leakage mobile applications. The DCO 8T SRAM operates under dual voltage supplies with write assist. Compared to traditional single-end 8T cell, DCO 8T SRAM showed the same performance with only half the...
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